2026
Reconfigurable Time-Domain In-Memory Computing Macro using CAM FeFET with Multilevel Delay Calibration in 28-nm CMOS
J. Mattar, M. M. Dahan, S. Dünkel, H. Mulaosmanovic, G. Beernink, S. Beyer, E. Yalon, and N. Wainstein
IEEE Transactions on Circuits and Systems I: Regular Papers · in press
2025
Fast-Locking and High-Resolution DLL with Binary Search and Clock Failure Detection for Wide Frequency Ranges in 3-nm FinFET CMOS
N. Wainstein, E. Avitay, and E. Avner
IEEE Open Journal of the Solid-State Circuits Society, vol. 5, pp. 229–239, August 2025
2024
Emerging memory electronics for non-volatile radiofrequency switching technologies
D. Kim, S. Yang, N. Wainstein, G. Ducournau, E. Pallecchi, H. Happy, E. Yalon, M. Kim, and D. Akinwande
Nature Reviews Electrical Engineering, vol. 1, pp. 10–23, January 2024
2023
Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy
T. Swoboda, N. Wainstein, S. Deshmukh, C. Koroglu, X. Gao, M. Lanza, H. Hilgenkamp, E. Pop, E. Yalon, and M. Muñoz‑Rojo
Nanoscale, vol. 15, 2023
2022
Monolayer molybdenum disulfide switches for 6G communication systems
M. Kim, G. Ducournau, S. Skrzypczak, S.J. Yang, P. Szriftgiser, N. Wainstein, K. Stern, H. Happy, E. Yalon, E. Pallecchi, and D. Akinwande
Nature Electronics, vol. 5, pp. 367–373, 2022
2022
Stateful Logic using Phase Change Memory
B. Hoffer, N. Wainstein, C. Neumann, E. Pop, E. Yalon, and S. Kvatinsky
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 8, no. 2, pp. 77–83, December 2022
2021
Sub-Nanosecond Pulses Enable Partial Reset for Analog Phase Change Memory
K. Stern, N. Wainstein, Y. Keller, C. Neumann, E. Pop, S. Kvatinsky, and E. Yalon
IEEE Electron Device Letters, vol. 42, no. 9, pp. 1291–1294, September 2021
2021
Indirectly Heated Switch as a Platform for Nanosecond Probing of Phase Transition Properties in Chalcogenides
N. Wainstein, G. Ankonina, T.P.E. Swoboda, M. Muñoz‑Rojo, S. Kvatinsky, and E. Yalon
IEEE Transactions on Electron Devices, vol. 68, no. 3, 2021
2021
Uncovering Phase Change Memory Energy Limits by Sub-Nanosecond Probing of Power Dissipation Dynamics
K. Stern, N. Wainstein, C. Neumann, Y. Keller, E. Pop, S. Kvatinsky, and E. Yalon
Advanced Electronic Materials, vol. 7, no. 8, 2021
2021
Radio Frequency Switches Based on Emerging Resistive Memory Technologies: A Survey
N. Wainstein, G. Adam, E. Yalon, and S. Kvatinsky
Proceedings of the IEEE, vol. 109, no. 1, pp. 75–95, January 2021
2020
Compact Modeling and Electro-thermal Measurements of Indirectly-Heated Phase Change RF Switches
N. Wainstein, G. Ankonina, S. Kvatinsky, and E. Yalon
IEEE Transactions on Electron Devices, vol. 67, no. 11, pp. 5182–5187, November 2020
2019
Two-terminal floating-gate transistors with a low-power memristive operation mode for analogue neuromorphic computing
L. Danial, E. Pikhay, E. Herbelin, N. Wainstein, V. Gupta, N. Wald, Y. Roizin, R. Daniel, and S. Kvatinsky
Nature Electronics, vol. 2, pp. 596–605, December 2019
2019
Adaptive Programming in Multi-Level Cell ReRAM
M. Ramadan, N. Wainstein, R. Ginosar, and S. Kvatinsky
Microelectronics Journal, vol. 90, pp. 169–180, August 2019
2018
Breaking Through the Speed-Power-Accuracy Tradeoff in ADCs using a Memristive Neuromorphic Architecture
L. Danial, N. Wainstein, S. Kraus, and S. Kvatinsky
IEEE Transactions on Emerging Topics in Computational Intelligence, vol. 2, no. 5, pp. 396–409, October 2018
2018
A Lumped RF Model for Nanoscale Memristive Devices and Non-Volatile Single-Pole Double-Throw Switches
N. Wainstein and S. Kvatinsky
IEEE Transactions on Nanotechnology, vol. 17, no. 5, pp. 873–883, September 2018
2018
TIME—Tunable Inductors using MEmristors
N. Wainstein and S. Kvatinsky
IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 65, no. 5, pp. 1505–1515, May 2018
2018
DIDACTIC: A Data Intelligent Digital-to-Analog Converter with a Trainable Integrated Circuit using Memristors
L. Danial, N. Wainstein, S. Kraus, and S. Kvatinsky
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 8, no. 1, pp. 146–158, March 2018